| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-467-6583 (014676583) |
| NCB Code | USA (01) |
| Manufacturer | Lockheed Martin Corporation, Hewlett-Packard Company |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 7555285P0701 | lockheed martin corporation | semiconductor device diode | 99971 | RFQ |
| 7555285P701 | lockheed martin corporation | semiconductor device diode | 99971 | RFQ |
| QPND-3022 | hewlett-packard company | semiconductor device diode | 54893 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS" |
| ABHP | OVERALL LENGTH | 30.000 MILLIMETERS MAXIMUM" |
| ABJT | TERMINAL LENGTH | 12.600 MILLIMETERS MAXIMUM" |
| ABKW | OVERALL HEIGHT | 2.400 MILLIMETERS MAXIMUM" |
| ABMK | OVERALL WIDTH | 5.100 MILLIMETERS MAXIMUM" |
| AKPV | MOUNTING FACILITY QUANTITY | 2" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 NANOAMPERES FORWARD CURRENT, AVERAGE PEAK" |
| CTRD | POWER RATING PER CHARACTERISTIC | 200.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE" |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE" |
| FEAT | SPECIAL FEATURES | HARDNESS CRITICAL ITEM" |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD" |
| ABBH | INCLOSURE MATERIAL | GLASS" |
| ABHP | OVERALL LENGTH | 30.000 MILLIMETERS MAXIMUM" |
| ABJT | TERMINAL LENGTH | 12.600 MILLIMETERS MAXIMUM" |
| ABKW | OVERALL HEIGHT | 2.400 MILLIMETERS MAXIMUM" |
| ABMK | OVERALL WIDTH | 5.100 MILLIMETERS MAXIMUM" |
| AKPV | MOUNTING FACILITY QUANTITY | 2" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 NANOAMPERES FORWARD CURRENT, AVERAGE PEAK" |
| CTRD | POWER RATING PER CHARACTERISTIC | 200.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE" |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE" |
| FEAT | SPECIAL FEATURES | HARDNESS CRITICAL ITEM" |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD" |
| Relevant Components for NSN - 5961-01-467-6583, 5961014676583 | ||||
| 5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
| 5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
| 5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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